IRF6216TRPBF International Rectifier HiRel Products
| Кількість | Ціна |
|---|---|
| 786+ | 44.93 грн |
| 1000+ | 41.43 грн |
| 10000+ | 36.94 грн |
| 100000+ | 29.85 грн |
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Технічний опис IRF6216TRPBF International Rectifier HiRel Products
Description: MOSFET P-CH 150V 2.2A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції IRF6216TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRF6216TRPBF | Виробник : International Rectifier |
 MOSFET P-CH 150V 2.2A 8-SOIC Транзистори |
товару немає в наявності |
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IRF6216TRPBF | Виробник : Infineon Technologies |
Description: MOSFET P-CH 150V 2.2A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
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IRF6216TRPBF | Виробник : Infineon Technologies |
Description: MOSFET P-CH 150V 2.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V |
товару немає в наявності |
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IRF6216TRPBF | Виробник : Infineon / IR |
MOSFET MOSFT PCh -150V -2.2A 240mOhm 33nC |
товару немає в наявності |
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IRF6216TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -2.2A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |