Технічний опис IRF6601 IR
Description: MOSFET N-CH 20V 26A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MT, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V, Power Dissipation (Max): 3.6W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: DIRECTFET™ MT, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V.
Інші пропозиції IRF6601
| Фото | Назва | Виробник | Інформація |
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Ціна |
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IRF6601 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 20V 26A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MT Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DIRECTFET™ MT Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V |
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