IRF6601

Description: MOSFET N-CH 20V 26A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DIRECTFET™ MT, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 3.6W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 26A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MT, Packaging: Tape & Reel (TR).