Технічний опис IRF6607 IR
Description: MOSFET N-CH 30V 27A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Supplier Device Package: DIRECTFET™ MT, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.6W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 94A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MT, Packaging: Tape & Reel (TR).
Інші пропозиції IRF6607
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRF6607 | Infineon Technologies |
 Description: MOSFET N-CH 30V 27A DIRECTFETInput Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Supplier Device Package: DIRECTFET™ MT Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.6W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 94A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MT Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4800 шт В кошику од. на суму грн. |
 |
IRF6607 | Infineon / IR |
MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF6607 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 27A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Supplier Device Package: DIRECTFET™ MT
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 94A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MT
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 27A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Supplier Device Package: DIRECTFET™ MT
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 94A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MT
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4800 шт
В кошику
од. на суму грн.