IRF6607TR1 Infineon Technologies

Description: MOSFET N-CH 30V 27A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 6930 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Part Status: Obsolete, Supplier Device Package: DIRECTFET™ MT, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.6W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 94A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MT, Packaging: Tape & Reel (TR).