IRF6608 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DIRECTFET™ ST
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric ST
Packaging: Tape & Reel (TR)
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Технічний опис IRF6608 Infineon Technologies
Description: MOSFET N-CH 30V 13A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: DIRECTFET™ ST, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric ST, Packaging: Tape & Reel (TR).