IRF6638TR1PBF International Rectifier/Infineon
Виробник: International Rectifier/Infineon
N-канальный combines the latest HEXFET® Power MOSFET... Транзистори Од. вим: шт
кількість в упаковці: 1 шт
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Технічний опис IRF6638TR1PBF International Rectifier/Infineon
Description: MOSFET N-CH 30V 25A DIRECTFET, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DIRECTFET™ MX, Vgs(th) (Max) @ Id: 2.35V @ 100µA, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 140A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MX, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V.
Інші пропозиції IRF6638TR1PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRF6638TR1PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 25A DIRECTFET Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DIRECTFET™ MX Vgs(th) (Max) @ Id: 2.35V @ 100µA Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 140A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MX Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF6638TR1PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 25A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
товару немає в наявності
В кошику
од. на суму грн.