IRF6643TR1PBF Infineon / IR

Description: MOSFET N-CH 150V 6.2A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DIRECTFET™ MZ, Vgs(th) (Max) @ Id: 4.9V @ 150µA, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 34.5mOhm @ 7.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MZ, Packaging: Tape & Reel (TR).