IRF6644TR1PBF

Description: MOSFET N-CH 100V 10.3A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: DIRECTFET™ MN, Vgs(th) (Max) @ Id: 4.8V @ 150µA, Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MN, Packaging: Tape & Reel (TR), Power Dissipation (Max): 2.8W (Ta), 89W (Tc).