Інші пропозиції IRF6645TR1PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRF6645TR1PBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH Si 100V 5.7A 7-Pin Direct-FET SJ T/R |
товару немає в наявності |
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IRF6645TR1PBF | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 100V 5.7A 7-Pin Direct-FET SJ T/R |
товару немає в наявності |
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IRF6645TR1PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 100V 5.7A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric SJ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 50µA Supplier Device Package: DIRECTFET™ SJ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V |
товару немає в наявності |
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IRF6645TR1PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 100V 5.7A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric SJ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 50µA Supplier Device Package: DIRECTFET™ SJ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V |
товару немає в наявності |