IRF6645TRPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5.7A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SJ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: DIRECTFET™ SJ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
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Технічний опис IRF6645TRPBF Infineon Technologies
Description: MOSFET N-CH 100V 5.7A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric SJ, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V, Power Dissipation (Max): 2.2W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4.9V @ 50µA, Supplier Device Package: DIRECTFET™ SJ, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V.
Інші пропозиції IRF6645TRPBF за ціною від 34.04 грн до 141.94 грн
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IRF6645TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 5.7A DIRECTFET Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DIRECTFET™ SJ Vgs(th) (Max) @ Id: 4.9V @ 50µA Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric SJ Packaging: Cut Tape (CT) |
на замовлення 22469 шт: термін постачання 21-31 дні (днів) |
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IRF6645TRPBF | Infineon Technologies |
MOSFETs 100V 1 N-CH HEXFET DIRECTFET SJ |
на замовлення 5058 шт: термін постачання 21-30 дні (днів) |
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| IRF6645TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5.7A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ SJ
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SJ
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 5.7A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ SJ
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric SJ
Packaging: Cut Tape (CT)
на замовлення 22469 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 74.37 грн |
| 10+ | 47.54 грн |
| 100+ | 40.06 грн |
| 500+ | 36.95 грн |
| IRF6645TRPBF |
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Виробник: Infineon Technologies
MOSFETs 100V 1 N-CH HEXFET DIRECTFET SJ
MOSFETs 100V 1 N-CH HEXFET DIRECTFET SJ
на замовлення 5058 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 141.94 грн |
| 10+ | 85.73 грн |
| 100+ | 52.96 грн |
| 500+ | 42.62 грн |
| 1000+ | 36.50 грн |
| 2500+ | 34.04 грн |