IRF6646TRPBF Infineon Technologies

Description: MOSFET N-CH 80V 12A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DIRECTFET™ MN, Vgs(th) (Max) @ Id: 4.9V @ 150µA, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MN, Packaging: Tape & Reel (TR).