IRF6646TRPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MN
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MN
Packaging: Tape & Reel (TR)
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Технічний опис IRF6646TRPBF Infineon Technologies
Description: MOSFET N-CH 80V 12A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DIRECTFET™ MN, Vgs(th) (Max) @ Id: 4.9V @ 150µA, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MN, Packaging: Tape & Reel (TR).
Інші пропозиції IRF6646TRPBF за ціною від 54.40 грн до 184.93 грн
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IRF6646TRPBF | Infineon Technologies |
Description: MOSFET N-CH 80V 12A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 150µA Supplier Device Package: DIRECTFET™ MN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V |
на замовлення 4840 шт: термін постачання 21-31 дні (днів) |
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IRF6646TRPBF | Infineon Technologies |
MOSFETs 80V 1 N-CH HEXFET 9.5mOhms 36nC |
на замовлення 9550 шт: термін постачання 21-30 дні (днів) |
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| IRF6646TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 12A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Description: MOSFET N-CH 80V 12A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 150µA
Supplier Device Package: DIRECTFET™ MN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
на замовлення 4840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 183.04 грн |
| 10+ | 113.85 грн |
| 100+ | 78.19 грн |
| 500+ | 59.49 грн |
| IRF6646TRPBF |
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Виробник: Infineon Technologies
MOSFETs 80V 1 N-CH HEXFET 9.5mOhms 36nC
MOSFETs 80V 1 N-CH HEXFET 9.5mOhms 36nC
на замовлення 9550 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 184.93 грн |
| 10+ | 121.26 грн |
| 100+ | 75.41 грн |
| 500+ | 62.43 грн |
| 1000+ | 58.31 грн |
| 2500+ | 54.40 грн |