Технічний опис IRF6665TR1PBF IOR
Description: MOSFET N-CH 100V 4.2A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric SH, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc), Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V, Power Dissipation (Max): 2.2W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: DIRECTFET™ SH, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V.
Інші пропозиції IRF6665TR1PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRF6665TR1PBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R |
товару немає в наявності |
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IRF6665TR1PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 100V 4.2A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric SH Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DIRECTFET™ SH Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
товару немає в наявності |