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IRF6668TR1PBF

IRF6668TR1PBF Infineon Technologies

irf6668pbf.pdf?fileId=5546d462533600a4015355ec96b91a64
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 55A DIRECTFET MZ
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
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Технічний опис IRF6668TR1PBF Infineon Technologies

Description: MOSFET N-CH 80V 55A DIRECTFET MZ, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MZ, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 4.9V @ 100µA, Supplier Device Package: DIRECTFET™ MZ, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V.

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Фото Назва Виробник Інформація Доступність Ціна
IRF6668TR1PBF IRF6668TR1PBF Infineon Technologies irf6668pbf.pdf?fileId=5546d462533600a4015355ec96b91a64 Description: MOSFET N-CH 80V 55A DIRECTFET MZ
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Cut Tape (CT)
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IRF6668TR1PBF IRF6668TR1PBF Infineon / IR international rectifier_irf6668pbf-1168952.pdf MOSFET MOSFT 80V 55A 15mOhm 22nC Qg
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IRF6668TR1PBF irf6668pbf.pdf?fileId=5546d462533600a4015355ec96b91a64
IRF6668TR1PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 55A DIRECTFET MZ
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
IRF6668TR1PBF international rectifier_irf6668pbf-1168952.pdf
IRF6668TR1PBF
Виробник: Infineon / IR
MOSFET MOSFT 80V 55A 15mOhm 22nC Qg
товару немає в наявності
В кошику  од. на суму  грн.