IRF6674TRPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 13.4A DIRECTFET
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
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Технічний опис IRF6674TRPBF Infineon Technologies
Description: MOSFET N-CH 60V 13.4A DIRECTFET, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DIRECTFET™ MZ, Vgs(th) (Max) @ Id: 4.9V @ 100µA, Power Dissipation (Max): 3.6W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MZ, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V.
Інші пропозиції IRF6674TRPBF за ціною від 85.35 грн до 172.68 грн
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IRF6674TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 13.4A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MZ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V Power Dissipation (Max): 3.6W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 100µA Supplier Device Package: DIRECTFET™ MZ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
на замовлення 13524 шт: термін постачання 21-31 дні (днів) |
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IRF6674TRPBF | Infineon Technologies |
MOSFETs 60V 1 N-CH HEXFET 11mOhms 24nC |
на замовлення 8141 шт: термін постачання 21-30 дні (днів) |
|
| IRF6674TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 13.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 60V 13.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.4A, 10V
Power Dissipation (Max): 3.6W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 13524 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 164.93 грн |
| 10+ | 128.43 грн |
| 100+ | 101.46 грн |
| 500+ | 86.05 грн |
| 1000+ | 85.35 грн |
| IRF6674TRPBF |
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Виробник: Infineon Technologies
MOSFETs 60V 1 N-CH HEXFET 11mOhms 24nC
MOSFETs 60V 1 N-CH HEXFET 11mOhms 24nC
на замовлення 8141 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 172.68 грн |
| 10+ | 143.47 грн |
| 100+ | 98.68 грн |
| 500+ | 93.74 грн |