IRF6691TR1 IOR

Description: MOSFET N-CH 20V 32A DIRECTFET, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 10 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DIRECTFET™ MT, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MT, Packaging: Tape & Reel (TR).