IRF6710S2TR1PBF International Rectifier

Description: MOSFET N-CH 25V 12A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: DirectFET™ Isometric S1, Vgs(th) (Max) @ Id: 2.4V @ 25µA, Power Dissipation (Max): 1.8W (Ta), 15W (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 37A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric S1, Packaging: Tape & Reel (TR).