IRF6712STRPBF Infineon Technologies
| Кількість | Ціна |
|---|---|
| 3+ | 143.06 грн |
| 10+ | 121.79 грн |
| 100+ | 88.48 грн |
| 250+ | 86.39 грн |
| 500+ | 72.46 грн |
| 1000+ | 61.10 грн |
| 2500+ | 57.62 грн |
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Технічний опис IRF6712STRPBF Infineon Technologies
Description: MOSFET N-CH 25V 17A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric SQ, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc), Rds On (Max) @ Id, Vgs: 4.9mOhm @ 17A, 10V, Power Dissipation (Max): 2.2W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 50µA, Supplier Device Package: DIRECTFET™ SQ, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 13 V.
Інші пропозиції IRF6712STRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
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IRF6712STRPBF | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 25V 17A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric SQ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 17A, 10V Power Dissipation (Max): 2.2W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 50µA Supplier Device Package: DIRECTFET™ SQ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 13 V |
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