IRF6716MTRPBF International Rectifier
Виробник: International Rectifier
Description: IRF6716 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 3.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V
Відгуки про товар
Написати відгук
Технічний опис IRF6716MTRPBF International Rectifier
Description: IRF6716 - 12V-300V N-CHANNEL POW, Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: DIRECTFET™ MX, Vgs(th) (Max) @ Id: 2.4V @ 100µA, Power Dissipation (Max): 3.6W (Ta), 78W (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MX, Packaging: Bulk.
Інші пропозиції IRF6716MTRPBF за ціною від 94.34 грн до 94.34 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||
|---|---|---|---|---|---|---|---|
|
|
IRF6716MTRPBF | Infineon Technologies |
Description: IRF6716 - 12V-300V N-CHANNEL POW Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DIRECTFET™ MX Vgs(th) (Max) @ Id: 2.4V @ 100µA Power Dissipation (Max): 3.6W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric MX Packaging: Bulk |
на замовлення 89960 шт: термін постачання 21-31 дні (днів) |
|
| IRF6716MTRPBF |
|
Виробник: Infineon Technologies
Description: IRF6716 - 12V-300V N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
Description: IRF6716 - 12V-300V N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MX
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 3.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
на замовлення 89960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 216+ | 94.34 грн |