IRF6721STR1PBF

IRF6721STR1PBF Infineon Technologies


irf6721spbf.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH Si 30V 14A 6-Pin Direct-FET SQ T/R
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Технічний опис IRF6721STR1PBF Infineon Technologies

Description: MOSFET N-CH 30V 14A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric SQ, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V, Power Dissipation (Max): 2.2W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 25µA, Supplier Device Package: DIRECTFET™ SQ, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V.

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IRF6721STR1PBF IRF6721STR1PBF Виробник : Infineon Technologies IRF6721S(TR)PBF.pdf Description: MOSFET N-CH 30V 14A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: DIRECTFET™ SQ
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V
товар відсутній
IRF6721STR1PBF IRF6721STR1PBF Виробник : Infineon Technologies IRF6721S(TR)PBF.pdf Description: MOSFET N-CH 30V 14A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: DIRECTFET™ SQ
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V
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IRF6721STR1PBF IRF6721STR1PBF Виробник : Infineon / IR international rectifier_irf6721spbf-1168984.pdf MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ
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