Технічний опис IRF6727MTR1PBF Infineon
Description: MOSFET N-CH 30V 32A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 100µA, Supplier Device Package: DIRECTFET™ MX, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 15 V.
Інші пропозиції IRF6727MTR1PBF
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
IRF6727MTR1PBF | Виробник : Infineon Technologies |
![]() |
товару немає в наявності |
|
![]() |
IRF6727MTR1PBF | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: DIRECTFET™ MX Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 15 V |
товару немає в наявності |
|
![]() |
IRF6727MTR1PBF | Виробник : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: DIRECTFET™ MX Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 15 V |
товару немає в наявності |
|
![]() |
IRF6727MTR1PBF | Виробник : Infineon Technologies |
![]() |
товару немає в наявності |