IRF6785MTRPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 3.4A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DIRECTFET™ MZ
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MZ
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис IRF6785MTRPBF Infineon Technologies
Description: MOSFET N-CH 200V 3.4A DIRECTFET, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DIRECTFET™ MZ, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 2.8W (Ta), 57W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MZ, Packaging: Tape & Reel (TR).
Інші пропозиції IRF6785MTRPBF за ціною від 62.03 грн до 192.42 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IRF6785MTRPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 3.4A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MZ Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DIRECTFET™ MZ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
на замовлення 8705 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
IRF6785MTRPBF | Infineon Technologies |
MOSFETs 200V 1 x N-CH HEXFET for Digital Audio |
на замовлення 698 шт: термін постачання 21-30 дні (днів) |
|
| IRF6785MTRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 3.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Description: MOSFET N-CH 200V 3.4A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 4.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
на замовлення 8705 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 121.32 грн |
| 10+ | 88.95 грн |
| 100+ | 77.66 грн |
| 500+ | 68.27 грн |
| 1000+ | 65.03 грн |
| 2000+ | 62.03 грн |
| IRF6785MTRPBF |
|
Виробник: Infineon Technologies
MOSFETs 200V 1 x N-CH HEXFET for Digital Audio
MOSFETs 200V 1 x N-CH HEXFET for Digital Audio
на замовлення 698 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 192.42 грн |
| 10+ | 177.51 грн |
| 2500+ | 76.12 грн |
| 4800+ | 70.48 грн |