IRF6797MTRPBF Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 36A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 38A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 13 V
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Технічний опис IRF6797MTRPBF Infineon Technologies
Description: MOSFET N-CH 25V 36A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 210A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 38A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 150µA, Supplier Device Package: DIRECTFET™ MX, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 13 V.
Інші пропозиції IRF6797MTRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRF6797MTRPBF | Виробник : Infineon Technologies |
MOSFET 25V SINGLE N-CH 20V VGS MAX |
товару немає в наявності |
