IRF6898MTRPBF Infineon Technologies

Description: IRF6898 - 12V-300V N-CHANNEL POW, Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 13 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±16V, Supplier Device Package: DirectFET™ Isometric MX, Vgs(th) (Max) @ Id: 2.1V @ 100µA, Power Dissipation (Max): 2.8W (Ta), 78W (Tc), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 214A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: DirectFET™ Isometric MX, Packaging: Bulk.