IRF7101TRPBF Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET 2N-CH 20V 3.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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Технічний опис IRF7101TRPBF Infineon Technologies
Description: MOSFET 2N-CH 20V 3.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V, Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Інші пропозиції IRF7101TRPBF
| Фото | Назва | Виробник | Інформація |
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IRF7101TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.5A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
товару немає в наявності |