Технічний опис IRF7105TR IRC
Description: MOSFET N/P-CH 25V 3.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V, 290pF @ 15V, Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, 250mOhm @ 1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 25nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOP.
Інші пропозиції IRF7105TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IRF7105TR | International Rectifier |
 (HEXFET,DUAL,N+P-CH,LL,2W,25V,2A,SO-8) Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRF7105TR | UMW |
Description: MOSFET N/P-CH 25V 3.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V, 290pF @ 15V Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, 250mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| IRF7105TR |
|
Виробник: International Rectifier
(HEXFET,DUAL,N+P-CH,LL,2W,25V,2A,SO-8) Транзистори
(HEXFET,DUAL,N+P-CH,LL,2W,25V,2A,SO-8) Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRF7105TR |
|
Виробник: UMW
Description: MOSFET N/P-CH 25V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V, 290pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 25V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V, 290pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V, 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.