Технічний опис IRF7233 IOR
Description: MOSFET P-CH 12V 9.5A 8SO, Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 600mV @ 250µA (Min), Power Dissipation (Max): 2.5W (Ta).
Інші пропозиції IRF7233
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRF7233 | International Rectifier |
 SO-8 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRF7233 | Infineon Technologies |
Description: MOSFET P-CH 12V 9.5A 8SO Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Power Dissipation (Max): 2.5W (Ta) |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7233 |
|
Виробник: International Rectifier
SO-8 Транзистори
SO-8 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRF7233 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 12V 9.5A 8SO
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 2.5W (Ta)
Description: MOSFET P-CH 12V 9.5A 8SO
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 2.5W (Ta)
товару немає в наявності
В кошику
од. на суму грн.