IRF7233PBF Infineon Technologies

Description: MOSFET P-CH 12V 9.5A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 600mV @ 250µA (Min), Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.