Технічний опис IRF7301TRPBF Infineon / IR
Description: MOSFET 2N-CH 20V 5.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.2A, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Інші пропозиції IRF7301TRPBF
| Фото | Назва | Виробник | Інформація |
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IRF7301TRPBF Код товару: 51514 |
 Різні комплектуючі > Різні комплектуючі 2 |
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IRF7301TRPBF | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 20V 5.2A 8-Pin SOIC T/R |
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IRF7301TRPBF | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 20V 5.2A 8-Pin SOIC T/R |
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IRF7301TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.2A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRF7301TRPBF | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 20V 5.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
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IRF7301TRPBF | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 20V 5.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
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IRF7301TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.2A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.2A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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