IRF7322D1TRPBF Infineon / IR

Description: MOSFET P-CH 20V 5.3A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Power Dissipation (Max): 2W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 62mOhm @ 2.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width).