IRF7324D1PBF International Rectifier

Description: MOSFET P-CH 20V 2.2A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Power Dissipation (Max): 2W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.