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IRF7325TRPBF IOR


RF7325PBF.pdf
Виробник: IOR

на замовлення 32000 шт:

термін постачання 14-28 дні (днів)
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Технічний опис IRF7325TRPBF IOR

Description: MOSFET 2P-CH 12V 7.8A 8-SOIC, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 900mV @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 7.8A, Drain to Source Voltage (Vdss): 12V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Інші пропозиції IRF7325TRPBF

Фото Назва Виробник Інформація Доступність Ціна
IRF7325TRPBF IRF7325TRPBF Infineon Technologies RF7325PBF.pdf Description: MOSFET 2P-CH 12V 7.8A 8-SOIC
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Drain to Source Voltage (Vdss): 12V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IRF7325TRPBF IRF7325TRPBF Infineon Technologies RF7325PBF.pdf Description: MOSFET 2P-CH 12V 7.8A 8-SOIC
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Drain to Source Voltage (Vdss): 12V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику  од. на суму  грн.
IRF7325TRPBF RF7325PBF.pdf
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 12V 7.8A 8-SOIC
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Drain to Source Voltage (Vdss): 12V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
IRF7325TRPBF RF7325PBF.pdf
Виробник: Infineon Technologies
Description: MOSFET 2P-CH 12V 7.8A 8-SOIC
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Drain to Source Voltage (Vdss): 12V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику  од. на суму  грн.