IRF7329PBF Infineon Technologies

Description: MOSFET 2P-CH 12V 9.2A 8SO, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 900mV @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V, Rds On (Max) @ Id, Vgs: 17mOhm @ 9.2A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 9.2A, Drain to Source Voltage (Vdss): 12V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.