Технічний опис IRF7338TRPBF IOR
Description: MOSFET N/P-CH 12V 6.3A/3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 6.3A, 3A, Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 9V, Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SO.
Інші пропозиції IRF7338TRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IRF7338TRPBF | Infineon Technologies |
 Description: MOSFET N/P-CH 12V 6.3A/3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6.3A, 3A Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 9V Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRF7338TRPBF | Infineon / IR |
MOSFET MOSFT DUAL N/PCh 12V 6.3A |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7338TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 12V 6.3A/3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 9V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 12V 6.3A/3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 9V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
товару немає в наявності
В кошику
од. на суму грн.
| IRF7338TRPBF |
|
Виробник: Infineon / IR
MOSFET MOSFT DUAL N/PCh 12V 6.3A
MOSFET MOSFT DUAL N/PCh 12V 6.3A
товару немає в наявності
В кошику
од. на суму грн.