Технічний опис IRF7342D2TRPBF IR
Description: MOSFET P-CH 55V 3.4A 8-SOIC, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V, FET Feature: Schottky Diode (Isolated), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V.
Інші пропозиції IRF7342D2TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRF7342D2TRPBF | Виробник : Infineon Technologies |
 Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC T/R |
товару немає в наявності |
|
 |
IRF7342D2TRPBF | Виробник : Infineon Technologies |
Description: MOSFET P-CH 55V 3.4A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V FET Feature: Schottky Diode (Isolated) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V |
товару немає в наявності |