Технічний опис IRF7342QTRPBF IOR
Description: MOSFET 2P-CH 55V 3.4A 8SO, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 3.4A, Drain to Source Voltage (Vdss): 55V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Cut Tape (CT).
Інші пропозиції IRF7342QTRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IRF7342QTRPBF | Infineon Technologies |
Description: MOSFET 2P-CH 55V 3.4A 8SOPart Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Current - Continuous Drain (Id) @ 25°C: 3.4A Drain to Source Voltage (Vdss): 55V Power - Max: 2W Technology: MOSFET (Metal Oxide) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7342QTRPBF |
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Виробник: Infineon Technologies
Description: MOSFET 2P-CH 55V 3.4A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 55V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 55V 3.4A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 55V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.



