Технічний опис IRF7342QTRPBF IOR
Description: MOSFET 2P-CH 55V 3.4A 8SO, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 3.4A, Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V, Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Інші пропозиції IRF7342QTRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRF7342QTRPBF | Виробник : Infineon Technologies |
 Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC T/R |
товару немає в наявності |
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IRF7342QTRPBF | Виробник : Infineon Technologies |
Description: MOSFET 2P-CH 55V 3.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 3.4A Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
товару немає в наявності |