Технічний опис IRF7350PBF International Rectifier
Description: MOSFET N/P-CH 100V 2.1A/1.5A 8SO, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A, Drain to Source Voltage (Vdss): 100V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube.
Інші пропозиції IRF7350PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRF7350PBF | Infineon Technologies |
 Description: MOSFET N/P-CH 100V 2.1A/1.5A 8SOPart Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A Drain to Source Voltage (Vdss): 100V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRF7350PBF | Infineon / IR |
MOSFET 100V DUAL N- & P- CH HEXFET |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7350PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 100V 2.1A/1.5A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: MOSFET N/P-CH 100V 2.1A/1.5A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| IRF7350PBF |
|
Виробник: Infineon / IR
MOSFET 100V DUAL N- & P- CH HEXFET
MOSFET 100V DUAL N- & P- CH HEXFET
товару немає в наявності
В кошику
од. на суму грн.