Інші пропозиції IRF7351PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IRF7351PBF | International Rectifier |
 MOSFET 60V DUAL N-CH HEXFET 17.8mOhm 24nC Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IRF7351PBF | Infineon Technologies |
Description: MOSFET 2N-CH 60V 8A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRF7351PBF | Infineon Technologies |
MOSFETs 60V DUAL N-CH HEXFET 17.8mOhm 24nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7351PBF |
|
Виробник: International Rectifier
MOSFET 60V DUAL N-CH HEXFET 17.8mOhm 24nC Транзистори
MOSFET 60V DUAL N-CH HEXFET 17.8mOhm 24nC Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IRF7351PBF |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 60V 8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Description: MOSFET 2N-CH 60V 8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 30V
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику
од. на суму грн.
| IRF7351PBF |
|
Виробник: Infineon Technologies
MOSFETs 60V DUAL N-CH HEXFET 17.8mOhm 24nC
MOSFETs 60V DUAL N-CH HEXFET 17.8mOhm 24nC
товару немає в наявності
В кошику
од. на суму грн.