Технічний опис IRF7389 International Rectifier
Description: MOSFET N/P-CH 30V 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 30V, Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.
Інші пропозиції IRF7389
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRF7389 | Infineon Technologies |
Description: MOSFET N/P-CH 30V 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7389 |
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Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.



