IRF7401TRPBF ROCHESTER ELECTRONICS
Виробник: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - IRF7401TRPBF - IRF7401 MOSFET N-CHANNEL SINGLE 20V 8.7
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
на замовлення 12935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 744+ | 34.08 грн |
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Технічний опис IRF7401TRPBF ROCHESTER ELECTRONICS
Description: MOSFET N-CH 20V 8.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 4.1A, 4.5V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V.
Інші пропозиції IRF7401TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRF7401TRPBF | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R |
товару немає в наявності |
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IRF7401TRPBF | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R |
товару немає в наявності |
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IRF7401TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 8.7A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel кількість в упаковці: 4000 шт |
товару немає в наявності |
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IRF7401TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 20V 8.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.1A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
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IRF7401TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 20V 8.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.1A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
товару немає в наявності |
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IRF7401TRPBF | Виробник : Infineon Technologies |
MOSFETs MOSFT 20V 8.7A 22mOhm 32nC |
товару немає в наявності |
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IRF7401TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 8.7A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel |
товару немає в наявності |