IRF7421D1 International Rectifier/Infineon
Виробник: International Rectifier/Infineon
N-канальный ПТ с диодом Шоттки (Vds=30V, Id=5,8A@T=25C, Id=4,6A@T=70C, Rds=0.035 R , P=2.0W, -55 to +150C), Schottky Vf = 0.39V... Транзистори Корпус: SO-8 Од. вим: шт
кількість в упаковці: 100 шт
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Технічний опис IRF7421D1 International Rectifier/Infineon
Description: MOSFET N-CH 30V 5.8A 8SO, Power Dissipation (Max): 2W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA.
Інші пропозиції IRF7421D1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IRF7421D1 | Infineon Technologies |
 Description: MOSFET N-CH 30V 5.8A 8SOPower Dissipation (Max): 2W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1V @ 250µA |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7421D1 | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 5.8A 8SO
Power Dissipation (Max): 2W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
Description: MOSFET N-CH 30V 5.8A 8SO
Power Dissipation (Max): 2W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1V @ 250µA
товару немає в наявності
В кошику
од. на суму грн.