IRF7452PBF

IRF7452PBF International Rectifier


IRSDS17405-1.pdf?t.download=true&u=5oefqw Виробник: International Rectifier
Description: SMPS HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
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Технічний опис IRF7452PBF International Rectifier

Description: SMPS HEXFET POWER MOSFET, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V.

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IRF7452PBF IRF7452PBF Виробник : Infineon / IR Infineon_IRF7452_DataSheet_v01_01_EN-1227980.pdf MOSFET 100V 1 N-CH HEXFET 60mOhms 33nC
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