Технічний опис IRF7452QTRPBF IOR
Description: MOSFET N-CH 100V 4.5A 8-SOIC, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: 8-SO, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V.
Інші пропозиції IRF7452QTRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRF7452QTRPBF | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 100V 4.5A 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: 8-SO Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V |
товар відсутній |
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IRF7452QTRPBF | Виробник : Infineon / IR |
MOSFET AUTO HEXFET SO-8 |
товар відсутній |