IRF7452TRPBF International Rectifier
Виробник: International Rectifier
Силовой MOSFET N-кан., 100V, 4.5A, 0.06Ом, -55...+150, SO-8 (SMD) Транзистори
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Технічний опис IRF7452TRPBF International Rectifier
Description: MOSFET N-CH 100V 4.5A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції IRF7452TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IRF7452TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 4.5A 8SO Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 5.5V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRF7452TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 4.5A 8SO Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 5.5V @ 250µA |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRF7452TRPBF | Infineon / IR |
MOSFET MOSFT 100V 4.5A 60mOhm 33nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7452TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 4.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 4.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IRF7452TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 4.5A 8SO
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Description: MOSFET N-CH 100V 4.5A 8SO
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 5.5V @ 250µA
товару немає в наявності
В кошику
од. на суму грн.
| IRF7452TRPBF |
|
Виробник: Infineon / IR
MOSFET MOSFT 100V 4.5A 60mOhm 33nC
MOSFET MOSFT 100V 4.5A 60mOhm 33nC
товару немає в наявності
В кошику
од. на суму грн.