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Технічний опис IRF7463TRPBF Infineon / IR
Description: MOSFET N-CH 30V 14A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції IRF7463TRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IRF7463TRPBF | Infineon Technologies |
 Description: MOSFET N-CH 30V 14A 8SOInput Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
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IRF7463TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SO Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRF7463TRPBF | INFINEON |
Description: INFINEON - IRF7463TRPBF - Leistungs-MOSFET, n-Kanal, 30 V, 14 A, 0.006 ohm, SOIC, Oberflächenmontage Verlustleistung: 2.5 Kanaltyp: n-Kanal Drain-Source-Durchgangswiderstand: 0.006 Qualifikation: - SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
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IRF7463TRPBF | INFINEON |
Description: INFINEON - IRF7463TRPBF - Leistungs-MOSFET, n-Kanal, 30 V, 14 A, 0.006 ohm, SOIC, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 14 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 2.5 Gate-Source-Schwellenspannung, max.: 2 Verlustleistung: 2.5 Bauform - Transistor: SOIC Anzahl der Pins: 8 Produktpalette: HEXFET Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.006 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.006 SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7463TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 14A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IRF7463TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Description: MOSFET N-CH 30V 14A 8SO
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
товару немає в наявності
В кошику
од. на суму грн.
| IRF7463TRPBF |
|
Виробник: INFINEON
Description: INFINEON - IRF7463TRPBF - Leistungs-MOSFET, n-Kanal, 30 V, 14 A, 0.006 ohm, SOIC, Oberflächenmontage
Verlustleistung: 2.5
Kanaltyp: n-Kanal
Drain-Source-Durchgangswiderstand: 0.006
Qualifikation: -
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - IRF7463TRPBF - Leistungs-MOSFET, n-Kanal, 30 V, 14 A, 0.006 ohm, SOIC, Oberflächenmontage
Verlustleistung: 2.5
Kanaltyp: n-Kanal
Drain-Source-Durchgangswiderstand: 0.006
Qualifikation: -
SVHC: No SVHC (27-Jun-2018)
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| IRF7463TRPBF |
|
Виробник: INFINEON
Description: INFINEON - IRF7463TRPBF - Leistungs-MOSFET, n-Kanal, 30 V, 14 A, 0.006 ohm, SOIC, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 14
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 2.5
Gate-Source-Schwellenspannung, max.: 2
Verlustleistung: 2.5
Bauform - Transistor: SOIC
Anzahl der Pins: 8
Produktpalette: HEXFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.006
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.006
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - IRF7463TRPBF - Leistungs-MOSFET, n-Kanal, 30 V, 14 A, 0.006 ohm, SOIC, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 14
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 2.5
Gate-Source-Schwellenspannung, max.: 2
Verlustleistung: 2.5
Bauform - Transistor: SOIC
Anzahl der Pins: 8
Produktpalette: HEXFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.006
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.006
SVHC: No SVHC (27-Jun-2018)
товару немає в наявності
В кошику
од. на суму грн.