IRF7465PBF

Виробник: Infineon
MOSFET N-CH 150V 1.9A 8-SOIC Транзистори

Виробник: International Rectifier
MOSFET N-CH 150V 1.9A 8-SOIC Транзистори

Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 1.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.14A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube

Виробник: Infineon Technologies
MOSFETs 150V 1 N-CH HEXFET 280mOhms 10nC