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Технічний опис IRF7468TRPBF Infineon / IR
Description: MOSFET N-CH 40V 9.4A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 20 V.
Інші пропозиції IRF7468TRPBF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IRF7468TRPBF | Infineon Technologies |
 Description: MOSFET N-CH 40V 9.4A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IRF7468TRPBF | INFINEON |
Description: INFINEON - IRF7468TRPBF - Leistungs-MOSFET, n-Kanal, 40 V, 9.4 A, 0.0117 ohm, SOIC, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 9.4 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 2.5 Gate-Source-Schwellenspannung, max.: 2 Verlustleistung: 2.5 Bauform - Transistor: SOIC Anzahl der Pins: 8 Produktpalette: HEXFET Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0117 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.0117 SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IRF7468TRPBF | INFINEON |
Description: INFINEON - IRF7468TRPBF - Leistungs-MOSFET, n-Kanal, 40 V, 9.4 A, 0.0117 ohm, SOIC, Oberflächenmontage Verlustleistung: 2.5 Kanaltyp: n-Kanal Drain-Source-Durchgangswiderstand: 0.0117 Qualifikation: - SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
| IRF7468TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 9.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 20 V
Description: MOSFET N-CH 40V 9.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| IRF7468TRPBF |
|
Виробник: INFINEON
Description: INFINEON - IRF7468TRPBF - Leistungs-MOSFET, n-Kanal, 40 V, 9.4 A, 0.0117 ohm, SOIC, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
Dauer-Drainstrom Id: 9.4
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 2.5
Gate-Source-Schwellenspannung, max.: 2
Verlustleistung: 2.5
Bauform - Transistor: SOIC
Anzahl der Pins: 8
Produktpalette: HEXFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0117
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.0117
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - IRF7468TRPBF - Leistungs-MOSFET, n-Kanal, 40 V, 9.4 A, 0.0117 ohm, SOIC, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
Dauer-Drainstrom Id: 9.4
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 2.5
Gate-Source-Schwellenspannung, max.: 2
Verlustleistung: 2.5
Bauform - Transistor: SOIC
Anzahl der Pins: 8
Produktpalette: HEXFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0117
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.0117
SVHC: No SVHC (27-Jun-2018)
товару немає в наявності
В кошику
од. на суму грн.
| IRF7468TRPBF |
|
Виробник: INFINEON
Description: INFINEON - IRF7468TRPBF - Leistungs-MOSFET, n-Kanal, 40 V, 9.4 A, 0.0117 ohm, SOIC, Oberflächenmontage
Verlustleistung: 2.5
Kanaltyp: n-Kanal
Drain-Source-Durchgangswiderstand: 0.0117
Qualifikation: -
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - IRF7468TRPBF - Leistungs-MOSFET, n-Kanal, 40 V, 9.4 A, 0.0117 ohm, SOIC, Oberflächenmontage
Verlustleistung: 2.5
Kanaltyp: n-Kanal
Drain-Source-Durchgangswiderstand: 0.0117
Qualifikation: -
SVHC: No SVHC (27-Jun-2018)
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.