IRF7478PBF International Rectifier


irf7478pbf.pdf?fileId=5546d462533600a4015355ff783e1c2a
Виробник: International Rectifier
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Технічний опис IRF7478PBF International Rectifier

Description: MOSFET N-CH 60V 7A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.

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IRF7478PBF IRF7478PBF Infineon Technologies irf7478pbf.pdf?fileId=5546d462533600a4015355ff783e1c2a description Description: MOSFET N-CH 60V 7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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IRF7478PBF IRF7478PBF Infineon Technologies Infineon_IRF7478_DataSheet_v01_01_EN-1732659.pdf description MOSFET 60V 1 N-CH HEXFET 26mOhms 21nC
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IRF7478PBF description irf7478pbf.pdf?fileId=5546d462533600a4015355ff783e1c2a
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
товару немає в наявності
В кошику  од. на суму  грн.
IRF7478PBF description Infineon_IRF7478_DataSheet_v01_01_EN-1732659.pdf
Виробник: Infineon Technologies
MOSFET 60V 1 N-CH HEXFET 26mOhms 21nC
товару немає в наявності
В кошику  од. на суму  грн.