Технічний опис IRF7478TRPBF International Rectifier
Description: MOSFET N-CH 60V 7A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA.
Інші пропозиції IRF7478TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IRF7478TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 7A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA |
товару немає в наявності |
В кошику од. на суму грн. |
|
IRF7478TRPBF | Infineon Technologies |
MOSFETs MOSFT 60V 7.6A 26mOhm 21nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IRF7478TRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Description: MOSFET N-CH 60V 7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
товару немає в наявності
В кошику
од. на суму грн.
| IRF7478TRPBF |
![]() |
Виробник: Infineon Technologies
MOSFETs MOSFT 60V 7.6A 26mOhm 21nC
MOSFETs MOSFT 60V 7.6A 26mOhm 21nC
товару немає в наявності
В кошику
од. на суму грн.





