IRF7483MTRPBF International Rectifier
Виробник: International RectifierDescription: MOSFET N-CH 40V 135A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
на замовлення 12511 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 302+ | 66.02 грн |
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Технічний опис IRF7483MTRPBF International Rectifier
Description: MOSFET N-CH 40V 135A DIRECTFET, Packaging: Bulk, Package / Case: DirectFET™ Isometric MF, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 135A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 100µA, Supplier Device Package: DirectFET™ Isometric MF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V.
Інші пропозиції IRF7483MTRPBF за ціною від 66.02 грн до 189.27 грн
| Фото | Назва | Виробник | Інформація |
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IRF7483MTRPBF | Виробник : Infineon Technologies |
Description: IRF7483 - 12V-300V N-CHANNEL POW Packaging: Bulk Package / Case: DirectFET™ Isometric MF Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: DirectFET™ Isometric MF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V |
на замовлення 3799 шт: термін постачання 21-31 дні (днів) |
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IRF7483MTRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 135A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MF Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: DirectFET™ Isometric MF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V |
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IRF7483MTRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 135A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric MF Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: DirectFET™ Isometric MF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V |
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