Технічний опис IRF7493PBF
- MOSFET, N, SO-8
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:80V
- Cont Current Id:1.2A
- On State Resistance:0.73ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4V
- Case Style:SOIC
- Termination Type:SMD
- Fall Time Tf:15ns
- Max Voltage Vds:200V
- Max Voltage Vgs:30V
- No. of Transistors:1
- Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D
- Power Dissipation Pd:2.5W
- Pulse Current Idm:10A
- Rise Time:9.5ns
- Transistor Case Style:SOIC
Інші пропозиції IRF7493PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRF7493PBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 80V 9.3A 8-Pin SOIC Tube |
товар відсутній |
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IRF7493PBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 80V 9.3A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5.6A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V |
товар відсутній |
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IRF7493PBF | Виробник : Infineon Technologies |
MOSFET 80V 1 N-CH HEXFET 15mOhms 31nC |
товар відсутній |
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IRF7493PBF | Виробник : Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 9.2A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 9.2A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 31nC Kind of channel: enhanced |
товар відсутній |